MMDT2222A transistor (npn) features power dissipation p cm : 0.15 w (tamb=25 ) collector current i cm : 0.6 a collector-base voltage v (br)cbo : 75 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic= 10 a, i e =0 75 v collector-emitter breakdown voltage v (br)ceo ic= 10ma, i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6 v collector cut-off current i cbo v cb =60v, i e =0 0. 01 a emitter cut-off current i ebo v eb = 3v, i c =0 0. 01 a h fe(1) v ce =10v, i c = 0.1ma 35 h fe(2) v ce =10v, i c = 1ma 50 h fe(3) v ce =10v, i c = 10ma 75 h fe(4) v ce =10v, i c = 150ma 100 300 h fe(5) v ce =10v, i c = 500ma 40 dc current gain h fe(6) v ce =1v, i c = 150ma 35 v ce (sat)1 i c =150 ma, i b = 15ma 0.3 v collector-emitter saturation voltage v ce (sat)2 i c =500 ma, i b = 50ma 1 v v be (sat)1 i c =150 ma, i b =15ma 0.6 1.2 v base-emitter saturation voltage v be (sat)2 i c =500 ma, i b = 50ma 2 v transition frequency f t v ce =20v, i c = 20ma f= 100mhz 300 mhz output capacitance c ob v cb =10v, i e = 0 f= 1mhz 8 pf input capacitance c ib v eb =0.5v, i c = 0 f= 1mhz 25 pf noise figure nf v ce =10v, i c =100a f= 1khz,rs=1k ? 4 db delay time t d 10 ns rise time t r v cc =30v, i c =150ma v be(off) =0.5v, i b1 =15ma 25 ns storage time t s 225 ns fall time t f v cc =30v, i c =150ma i b1 = i b2 = 15m a 60 ns marking :k1p mmdt 2222a http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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